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SCT4036DWATL ROHM Semiconductor
*For representation only.

SCT4036DWATL

SiC MOSFETs 750V, 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
Technical Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 750 V
Current - Continuous Drain (Id) @ 25°C 38A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 47mOhm @ 21A, 18V
Vgs(th) (Max) @ Id 4.8V @ 11.1mA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 18 V
Vgs (Max) +21V, -4V
Input Capacitance (Ciss) (Max) @ Vds 1794 pF @ 500 V
Power Dissipation (Max) 115W
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263-7LA
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,443
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC MOSFETs
RoHS
Lifecycle New Product
Lead Time 189 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Manufactured by ROHM Semiconductor, the SCT4036DWATL is classified as a sic mosfets. This component is defined by a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 750 V, a current, continuous drain (id) @ 25°C of 38A (Tj), a drive voltage of 18V and a rds on (max) @ id, vgs of 47mOhm @ 21A, 18V. This part has a typical lead time of 189 Days from factory. Simplytronix stocks SCT4036DWATL for same-day shipping with genuine parts guaranteed.

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