*For representation only.
SCT4036DEC11
SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 750V, 42A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 750 V |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 47mOhm @ 21A, 18V |
| Vgs(th) (Max) @ Id | 4.8V @ 11.1mA |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 18 V |
| Vgs (Max) | +21V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 1794 pF @ 500 V |
| Power Dissipation (Max) | 136W |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247N |
| Package / Case | TO-247-3 |
Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 450 |
14,049
In Stock
Packaging: Tube
✔ 24h Response
✔ Global Shipping
✔ Genuine Parts
✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request
click here to view sample report
Key Specifications
| Category | SiC MOSFETs |
| RoHS | |
| Lifecycle | New Product |
| Reported Lead Time | 189 Days (from factory) |
Documentation
Not Available
Compliance & Export Information
| Country | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
