*For representation only.
SCT3120AW7TL
ROHM Semiconductor
Active
SiC MOSFETs Transistor SiC MOSFET 650V 120m 3rd Gen TO-263-7L
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Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 156mOhm @ 6.7A, 18V |
| Vgs(th) (Max) @ Id | 5.6V @ 3.33mA |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 18 V |
| Vgs (Max) | +22V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 500 V |
| FET Feature | - |
| Power Dissipation (Max) | 100W |
| Operating Temperature | 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1000 |
7,713
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 189 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
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Product Overview
Manufactured by ROHM Semiconductor, the SCT3120AW7TL is classified as a sic mosfets. Notable characteristics of this part include a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 650 V, a current, continuous drain (id) @ 25°C of 21A (Tc), a rds on (max) @ id, vgs of 156mOhm @ 6.7A, 18V and a vgs(th) (max) @ id of 5.6V @ 3.33mA. This part has a typical lead time of 189 Days from factory. You can source SCT3120AW7TL through Simplytronix, with fast shipping and verified authenticity.
