*For representation only.
⚙
Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 13A, 18V |
| Vgs(th) (Max) @ Id | 5.6V @ 6.67mA |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 18 V |
| Vgs (Max) | +22V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 852 pF @ 500 V |
| FET Feature | - |
| Power Dissipation (Max) | 159W |
| Operating Temperature | 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1000 |
4,449
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 189 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
ℹ
Product Overview
SCT3060AW7TL is a sic mosfets manufactured by ROHM Semiconductor. This component is defined by a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 650 V, a current, continuous drain (id) @ 25°C of 38A (Tc), a rds on (max) @ id, vgs of 78mOhm @ 13A, 18V and a vgs(th) (max) @ id of 5.6V @ 6.67mA. This part has a typical lead time of 189 Days from factory. Order SCT3060AW7TL from Simplytronix for authenticated stock and same-day order processing.
