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SCT3060ARHRC15 ROHM Semiconductor
*For representation only.

SCT3060ARHRC15

SiC MOSFETs Transistor SiC MOSFET 650V 60m 3rd Gen TO-247-4L
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 78mOhm @ 13A, 18V
Vgs(th) (Max) @ Id 5.6V @ 6.67mA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 18 V
Vgs (Max) +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds 852 pF @ 500 V
FET Feature -
Power Dissipation (Max) 165W
Operating Temperature 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4
📦 Product Attributes
Packaging Tube
Standard Pack Qty 450
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,081
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 189 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

ROHM Semiconductor's SCT3060ARHRC15 is a widely used sic mosfets in electronic designs. Key specifications include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 650 V, a current, continuous drain (id) @ 25°C of 39A (Tc), a drive voltage of 18V and a rds on (max) @ id, vgs of 78mOhm @ 13A, 18V. This part has a typical lead time of 189 Days from factory. Simplytronix stocks SCT3060ARHRC15 for same-day shipping with genuine parts guaranteed.

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