*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 364mOhm @ 4A, 18V |
| Vgs(th) (Max) @ Id | 4V @ 1.4mA |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 18 V |
| Vgs (Max) | +22V, -6V |
| Input Capacitance (Ciss) (Max) @ Vds | 667 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 108W (Tc) |
| Operating Temperature | 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247N |
| Package / Case | TO-247-3 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 450 |
4,948
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 161 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
ROHM Semiconductor's SCT2280KEGC11 is a widely used sic mosfets in electronic designs. Notable characteristics of this part include a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1200 V, a current, continuous drain (id) @ 25°C of 14A (Tc), a drive voltage of 18V and a rds on (max) @ id, vgs of 364mOhm @ 4A, 18V. This part has a typical lead time of 161 Days from factory. You can source SCT2280KEGC11 through Simplytronix, with fast shipping and verified authenticity.
