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SCS315KGC16 ROHM Semiconductor
*For representation only.

SCS315KGC16

SiC Schottky Diodes 1200V, 15A, THD, Silicon-carbide (SiC) SBD
Technical Specifications
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 15A
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 15 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 60 µA @ 1200 V
Capacitance @ Vr, F 780pF @ 1V, 1MHz
Grade -
Qualification -
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220ACGE
Operating Temperature - Junction 175°C
📦 Product Attributes
Packaging Tube
Standard Pack Qty
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,188
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 154 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
USHTS 8541100080
ECCN EAR99
Product Overview

Manufactured by ROHM Semiconductor, the SCS315KGC16 is classified as a sic schottky diodes. Notable characteristics of this part include a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 1200 V, a current, average rectified of 15A, a voltage, forward (vf) (max) @ if of 1.6 V @ 15 A, a speed of No Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 154 Days from factory. Order SCS315KGC16 from Simplytronix for authenticated stock and same-day order processing.

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