*For representation only.
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Technical Specifications
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 12A |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
| Capacitance @ Vr, F | 600pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220ACP |
| Operating Temperature - Junction | 175°C (Max) |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 1000 |
8,112
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541100000 |
| USHTS | 8541100080 |
| ECCN | EAR99 |
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Product Overview
ROHM Semiconductor's SCS312AHGC9 is a widely used sic schottky diodes in electronic designs. It features a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 650 V, a current, average rectified of 12A, a speed of Zero Recovery Time > 500mA (Io), a reverse recovery time of 0 ns and a current, reverse leakage @ vr of 60 µA @ 650 V. This part has a typical lead time of 0 Days from factory. Simplytronix carries SCS312AHGC9 in stock, backed by a genuine parts guarantee and quick dispatch.
