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SCS304AHGC9 ROHM Semiconductor
*For representation only.

SCS304AHGC9

SiC Schottky Diodes 650V;4A;34W SiC SBD TO-220ACP
Technical Specifications
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 4A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 4 A
Speed Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 20 µA @ 650 V
Capacitance @ Vr, F 200pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220ACP
Operating Temperature - Junction 175°C (Max)
📦 Product Attributes
Packaging Tube
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,278
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant
Lifecycle Not Recommended for New Designs
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541100000
USHTS 8541100080
ECCN EAR99
Product Overview

The SCS304AHGC9 from ROHM Semiconductor falls under the sic schottky diodes category. Key specifications include a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 650 V, a current, average rectified of 4A, a voltage, forward (vf) (max) @ if of 1.5 V @ 4 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 0 Days from factory. Simplytronix stocks SCS304AHGC9 for same-day shipping with genuine parts guaranteed.

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