*For representation only.
RGW50TK65DGVC11
ROHM Semiconductor
Active
IGBTs High-Speed Fast Switching Type, 650V 18A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT
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Technical Specifications
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 30 A |
| Current - Collector Pulsed (Icm) | 100 A |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 25A |
| Power - Max | 67 W |
| Switching Energy | 390µJ (on), 430µJ (off) |
| Input Type | Standard |
| Gate Charge | 73 nC |
| Td (on/off) @ 25°C | 35ns/102ns |
| Test Condition | 400V, 25A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 92 ns |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3PFM, SC-93-3 |
| Supplier Device Package | TO-3PFM |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 450 |
11,436
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | IGBTs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 154 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
ROHM Semiconductor's RGW50TK65DGVC11 is a widely used igbts in electronic designs. This component is defined by a IGBT type of Trench Field Stop, a voltage, collector emitter breakdown of 650 V, a current, collector (ic) of 30 A, a current, collector pulsed of 100 A, a vce(on) (max) @ vge, ic of 1.9V @ 15V, 25A and a power, max of 67 W. This part has a typical lead time of 154 Days from factory. Order RGW50TK65DGVC11 from Simplytronix for authenticated stock and same-day order processing.
