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RGTVX2TS65GC11 ROHM Semiconductor
*For representation only.

RGTVX2TS65GC11

IGBTs 650V 60A Field Stop Trench IGBT
Technical Specifications
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 111 A
Current - Collector Pulsed (Icm) 240 A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 60A
Power - Max 319 W
Switching Energy 2.08mJ (on), 1.15mJ (off)
Input Type Standard
Gate Charge 123 nC
Td (on/off) @ 25°C 49ns/150ns
Test Condition 400V, 60A, 10Ohm, 15V
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247N
📦 Product Attributes
Packaging Tube
Standard Pack Qty 450
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,820
Units In Stock
📦 Tube
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🔑 Key Specifications
Category IGBTs
RoHS RoHS Compliant
Lifecycle Not Recommended for New Designs
Lead Time 154 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
Product Overview

Manufactured by ROHM Semiconductor, the RGTVX2TS65GC11 is classified as an igbts. This component is defined by a IGBT type of Trench Field Stop, a voltage, collector emitter breakdown of 650 V, a current, collector (ic) of 111 A, a current, collector pulsed of 240 A, a vce(on) (max) @ vge, ic of 1.9V @ 15V, 60A and a power, max of 319 W. This part has a typical lead time of 154 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks RGTVX2TS65GC11 for same-day shipping with genuine parts guaranteed.

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