*For representation only.
RGTV80TS65DGC13
IGBTs 2us Short-Circuit Tol 650V 40A FRD Built-in TO-247N Field Stop Trench IGBT
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Technical Specifications
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 78 A |
| Current - Collector Pulsed (Icm) | 160 A |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 40A |
| Power - Max | 234 W |
| Switching Energy | 1.02mJ (on), 710µJ (off) |
| Input Type | Standard |
| Gate Charge | 81 nC |
| Td (on/off) @ 25°C | 39ns/113ns |
| Test Condition | 400V, 40A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 101 ns |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247GE |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 600 |
13,748
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | IGBTs |
| RoHS | RoHS Compliant |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 154 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
The RGTV80TS65DGC13 from ROHM Semiconductor falls under the igbts category. It features a IGBT type of Trench Field Stop, a voltage, collector emitter breakdown of 650 V, a current, collector (ic) of 78 A, a current, collector pulsed of 160 A, a vce(on) (max) @ vge, ic of 1.9V @ 15V, 40A and a power, max of 234 W. This part has a typical lead time of 154 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks RGTV80TS65DGC13 for same-day shipping with genuine parts guaranteed.
