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RGTH60TK65GC11 ROHM Semiconductor
*For representation only.

RGTH60TK65GC11

IGBTs High-Speed Switching Type, 650V 30A, TO-3PFM, Field Stop Trench IGBT
Technical Specifications
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 28 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 30A
Power - Max 61 W
Switching Energy -
Input Type Standard
Gate Charge 58 nC
Td (on/off) @ 25°C 27ns/105ns
Test Condition 400V, 30A, 10Ohm, 15V
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-3PFM, SC-93-3
Supplier Device Package TO-3PFM
📦 Product Attributes
Packaging Tube
Standard Pack Qty 450
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,816
Units In Stock
📦 Tube
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🔑 Key Specifications
Category IGBTs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 154 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
Product Overview

RGTH60TK65GC11 is an igbts manufactured by ROHM Semiconductor. This component is defined by a IGBT type of Trench Field Stop, a voltage, collector emitter breakdown of 650 V, a current, collector (ic) of 28 A, a current, collector pulsed of 120 A, a vce(on) (max) @ vge, ic of 2.1V @ 15V, 30A and a power, max of 61 W. This part has a typical lead time of 154 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks RGTH60TK65GC11 for same-day shipping with genuine parts guaranteed.

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