*For representation only.
RGTH60TK65DGC11
IGBTs High-Speed Switching Type, 650V 30A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT
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Technical Specifications
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 28 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 30A |
| Power - Max | 61 W |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | 58 nC |
| Td (on/off) @ 25°C | 27ns/105ns |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 58 ns |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3PFM, SC-93-3 |
| Supplier Device Package | TO-3PFM |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 450 |
8,950
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | IGBTs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 154 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
RGTH60TK65DGC11 is an igbts manufactured by ROHM Semiconductor. Notable characteristics of this part include a IGBT type of Trench Field Stop, a voltage, collector emitter breakdown of 650 V, a current, collector (ic) of 28 A, a current, collector pulsed of 120 A, a vce(on) (max) @ vge, ic of 2.1V @ 15V, 30A and a power, max of 61 W. This part has a typical lead time of 154 Days from factory and ships with a full manufacturer datasheet available for download. You can source RGTH60TK65DGC11 through Simplytronix, with fast shipping and verified authenticity.
