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RGT8TM65DGC9 ROHM Semiconductor
*For representation only.

RGT8TM65DGC9

ROHM Semiconductor Not For New Designs
IGBTs 5s Short-Circuit Tolerance, 650V 4A, FRD Built-in, TO-220NFM, Field Stop Trench IGBT
Technical Specifications
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 5 A
Current - Collector Pulsed (Icm) 12 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 4A
Power - Max 16 W
Switching Energy -
Input Type Standard
Gate Charge 13.5 nC
Td (on/off) @ 25°C 17ns/69ns
Test Condition 400V, 4A, 50Ohm, 15V
Reverse Recovery Time (trr) 40 ns
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220NFM
📦 Product Attributes
Packaging Tube
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,544
Units In Stock
📦 Tube
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🔑 Key Specifications
Category IGBTs
RoHS RoHS Compliant By Exemption
Lifecycle Not Recommended for New Designs
Lead Time 154 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
Product Overview

The RGT8TM65DGC9 from ROHM Semiconductor falls under the igbts category. Key specifications include a IGBT type of Trench Field Stop, a voltage, collector emitter breakdown of 650 V, a current, collector (ic) of 5 A, a current, collector pulsed of 12 A, a vce(on) (max) @ vge, ic of 2.1V @ 15V, 4A and a power, max of 16 W. This part has a typical lead time of 154 Days from factory and ships with a full manufacturer datasheet available for download. You can source RGT8TM65DGC9 through Simplytronix, with fast shipping and verified authenticity.

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