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RGT16NS65DGC9 ROHM Semiconductor
*For representation only.

RGT16NS65DGC9

ROHM Semiconductor Not For New Designs
IGBTs 5s Short-Circuit Tolerance, 650V 8A, FRD Built-in, TO-262, Field Stop Trench IGBT
Technical Specifications
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 16 A
Current - Collector Pulsed (Icm) 24 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 8A
Power - Max 94 W
Switching Energy -
Input Type Standard
Gate Charge 21 nC
Td (on/off) @ 25°C 13ns/33ns
Test Condition 400V, 8A, 10Ohm, 15V
Reverse Recovery Time (trr) 42 ns
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
Supplier Device Package TO-262
📦 Product Attributes
Packaging Tube
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
12,992
Units In Stock
📦 Tube
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🔑 Key Specifications
Category IGBTs
RoHS RoHS Compliant By Exemption
Lifecycle Not Recommended for New Designs
Lead Time 154 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
Product Overview

Manufactured by ROHM Semiconductor, the RGT16NS65DGC9 is classified as an igbts. Key specifications include a IGBT type of Trench Field Stop, a voltage, collector emitter breakdown of 650 V, a current, collector (ic) of 16 A, a current, collector pulsed of 24 A, a vce(on) (max) @ vge, ic of 2.1V @ 15V, 8A and a power, max of 94 W. This part has a typical lead time of 154 Days from factory. You can source RGT16NS65DGC9 through Simplytronix, with fast shipping and verified authenticity.

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