*For representation only.
GNP2050TD-ZTR
ROHM Semiconductor
Discontinued
GaN FETs EcoGaN, 650V 31.5A TOLL-8N, E-mode Gallium-Nitride(GaN) HEMT
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Technical Specifications
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 31.5A (TC) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 6V |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 12A, 6V |
| Vgs(th) (Max) @ Id | 2.5V @ 23mA |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 6 V |
| Vgs (Max) | +6.5V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 222 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 159W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TOLL-8N |
| Package / Case | 8-PowerSFN |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2000 |
4,232
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | GaN FETs |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 168 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| ECCN | EAR99 |
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Product Overview
The GNP2050TD-ZTR from ROHM Semiconductor falls under the gan fets category. It features a FET type of N-Channel, a technology of GaNFET (Gallium Nitride), a drain to source voltage of 650 V, a current, continuous drain (id) @ 25°C of 31.5A (TC), a drive voltage of 5V, 6V and a rds on (max) @ id, vgs of 70mOhm @ 12A, 6V. This part has a typical lead time of 168 Days from factory. You can source GNP2050TD-ZTR through Simplytronix, with fast shipping and verified authenticity.
