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DTDG14GPDT100
ROHM Semiconductor
Active
Digital Transistors NPN, SOT-89, R2 Alone Type Digital Transistor (with built-in resistor and zener diode) : DTDG14GPD is a digital transistor (with built-in resistor and zener diode), suitable for driver.
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Technical Specifications
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 70 V |
| Resistor - Base (R1) | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 500mA, 2V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 500mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| Frequency - Transition | 80 MHz |
| Power - Max | 500 mW |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Supplier Device Package | MPT3 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1000 |
3,466
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Digital Transistors |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541210095 |
| TARIC | 8541210000 |
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Product Overview
The DTDG14GPDT100 from ROHM Semiconductor falls under the digital transistors category. Key specifications include a transistor type of NPN - Pre-Biased, a current, collector (ic) of 1 A, a voltage, collector emitter breakdown of 70 V, a resistor, base of 10 kOhms, a DC current gain (hfe) (min) @ ic, vce of 300 @ 500mA, 2V and a vce saturation (max) @ ib, ic of 400mV @ 5mA, 500mA. This part has a typical lead time of 0 Days from factory. Order DTDG14GPDT100 from Simplytronix for authenticated stock and same-day order processing.
