*For representation only.
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Technical Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 3V |
| Power - Max | 40 W |
| Frequency - Transition | 200MHz |
| Operating Temperature | 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263AB |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1000 |
4,569
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 91 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
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Product Overview
2SCR586JGTLL is a bipolar transistors - bjt manufactured by ROHM Semiconductor. Key specifications include a transistor type of NPN, a current, collector (ic) of 5 A, a voltage, collector emitter breakdown of 80 V, a vce saturation (max) @ ib, ic of 300mV @ 100mA, 2A, a current, collector cutoff of 1µA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 120 @ 500mA, 3V. This part has a typical lead time of 91 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries 2SCR586JGTLL in stock, backed by a genuine parts guarantee and quick dispatch.
