*For representation only.
2SAR587D3TL1
Bipolar Transistors - BJT PNP, TO-252 (DPAK), -120V -3A, Power Transistor
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Technical Specifications
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 5V |
| Power - Max | 10 W |
| Frequency - Transition | 250MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2500 |
10,620
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 105 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290055 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
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Product Overview
ROHM Semiconductor's 2SAR587D3TL1 is a widely used bipolar transistors - bjt in electronic designs. This component is defined by a transistor type of PNP, a current, collector (ic) of 3 A, a voltage, collector emitter breakdown of 120 V, a vce saturation (max) @ ib, ic of 200mV @ 100mA, 1A, a current, collector cutoff of 1µA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 120 @ 100mA, 5V. This part has a typical lead time of 105 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks 2SAR587D3TL1 for same-day shipping with genuine parts guaranteed.
