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UPA2826T1S-E2- Renesas Electronics
*For representation only.

UPA2826T1S-E2-

MOSFETs POWER TRANSISTOR MOS-IC
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 27A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 8V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 13.5A, 8V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 4 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 3610 pF @ 10 V
FET Feature -
Power Dissipation (Max) 20W (Ta)
Operating Temperature 150°C
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-HWSON (3.3x3.3)
Package / Case 8-PowerWDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 5000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,007
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 84 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

UPA2826T1S-E2-AT is a mosfets manufactured by Renesas Electronics. This component is defined by a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 20 V, a current, continuous drain (id) @ 25°C of 27A (Ta), a drive voltage of 2.5V, 8V and a rds on (max) @ id, vgs of 4.3mOhm @ 13.5A, 8V. This part has a typical lead time of 84 Days from factory and ships with a full manufacturer datasheet available for download. Order UPA2826T1S-E2-AT from Simplytronix for authenticated stock and same-day order processing.

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