*For representation only.
⚙
Technical Specifications
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 700 V |
| Current - Continuous Drain (Id) @ 25°C | 15.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Rds On (Max) @ Id, Vgs | 169mOhm @ 4A, 6V |
| Vgs(th) (Max) @ Id | 2.5V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 5.9 nC @ 6 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 485 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 69.4W (Tc) |
| Operating Temperature | -55°C ~ 150°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
| Package / Case | 9-PowerWDFN |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 5000 |
10,103
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 126 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
ℹ
Product Overview
Manufactured by Renesas Electronics, the TP70H135G4PJSGB-TR is classified as a gan fets. It features a FET type of N-Channel, a technology of GaNFET (Gallium Nitride), a drain to source voltage of 700 V, a current, continuous drain (id) @ 25°C of 15.8A (Tc), a drive voltage of 6V and a rds on (max) @ id, vgs of 169mOhm @ 4A, 6V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. You can source TP70H135G4PJSGB-TR through Simplytronix, with fast shipping and verified authenticity.
