*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Rds On (Max) @ Id, Vgs | 312mOhm @ 5A, 6V |
| Vgs(th) (Max) @ Id | 2V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 12.7 nC @ 6 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1225 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 31.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (8x8) |
| Package / Case | 8-VDFN Exposed Pad |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
6,609
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 126 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541497040 |
| ECCN | EAR99 |
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Product Overview
Renesas Electronics's TP65H300G4LSGBE-TR is a widely used gan fets in electronic designs. This component is defined by a FET type of N-Channel, a technology of GaNFET (Gallium Nitride), a drain to source voltage of 650 V, a current, continuous drain (id) @ 25°C of 8A (Tc), a drive voltage of 6V and a rds on (max) @ id, vgs of 312mOhm @ 5A, 6V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries TP65H300G4LSGBE-TR in stock, backed by a genuine parts guarantee and quick dispatch.
