*For representation only.
⚙
Technical Specifications
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 18.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id | 4.1V @ 1.8mA |
| Gate Charge (Qg) (Max) @ Vgs | 14.4 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 818 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 65.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1000 |
11,542
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 126 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
Manufactured by Renesas Electronics, the TP65H100G4PS is classified as a gan fets. This component is defined by a FET type of N-Channel, a technology of GaNFET (Gallium Nitride), a drain to source voltage of 650 V, a current, continuous drain (id) @ 25°C of 18.9A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 110mOhm @ 12A, 10V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries TP65H100G4PS in stock, backed by a genuine parts guarantee and quick dispatch.
