*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 22A, 10V |
| Vgs(th) (Max) @ Id | 4.8V @ 700µA |
| Gate Charge (Qg) (Max) @ Vgs | 15.3 nC @ 10 V |
| Vgs (Max) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 119W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TOLL |
| Package / Case | 8-PowerSFN |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2000 |
13,208
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 126 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| ECCN | EAR99 |
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Product Overview
TP65H085G4QS-TR is a gan fets manufactured by Renesas Electronics. Key specifications include a FET type of N-Channel, a technology of GaNFET (Cascode Gallium Nitride FET), a drain to source voltage of 650 V, a current, continuous drain (id) @ 25°C of 34A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 60mOhm @ 22A, 10V. This part has a typical lead time of 126 Days from factory. Order TP65H085G4QS-TR from Simplytronix for authenticated stock and same-day order processing.
