*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 46.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 4.8V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 30 |
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Alternate / Replacement Parts
| Alternate Packaging | |
| Suggested Replacement | TP65H035G4WS |
5,433
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
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Product Overview
Renesas Electronics's TP65H035WS is a widely used gan fets in electronic designs. Notable characteristics of this part include a FET type of N-Channel, a technology of GaNFET (Cascode Gallium Nitride FET), a drain to source voltage of 650 V, a current, continuous drain (id) @ 25°C of 46.5A (Tc), a drive voltage of 12V and a rds on (max) @ id, vgs of 41mOhm @ 30A, 10V. This part has a typical lead time of 0 Days from factory. You can source TP65H035WS through Simplytronix, with fast shipping and verified authenticity.
