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71V416S10BEG

SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
Technical Specifications
Programmable Not Verified
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 4Mbit
Memory Organization 256K x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 10ns
Access Time 10 ns
Voltage - Supply 3V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package / Case 48-TFBGA
Supplier Device Package 48-CABGA (9x9)
Product Attributes
Packaging Tray
Standard Pack Qty250
Alternate / Replacement Parts
Alternate Packaging 71V416S10BEG8
Suggested Replacement
9,556
In Stock
Packaging: Tray
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✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request click here to view sample report
Key Specifications
CategorySRAM
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 126 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CNHTS 8542329010
CAHTS 8542320041
USHTS 8542320041
JPHTS 854232019
KRHTS 8542321020
TARIC 8542324500
MXHTS 8542320201
ECCN 3A991.b.2.a
Product Overview

71V416S10BEG by Renesas Electronics is a sram designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Integrated circuits combine a large number of transistors and other elementary electronic components in miniaturized form into a single physical device, that is designed for a specific purpose or function and characterized by its performance of that function rather than by the behavior of its component pieces. Examples include microcontrollers, battery monitors and charge controllers, analog to digital converters, operational amplifiers, logic gates, voltage regulators, gate drivers, motro controllers, and others.

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