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PSMP050N10NS2_T0_00601 Panjit
*For representation only.

PSMP050N10NS2_T0_00601

Panjit Active
MOSFETs 100V 5mohm Low FOM MOSFET
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.8V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3910 pF @ 50 V
FET Feature -
Power Dissipation (Max) 138W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220AB-L
Package / Case TO-220-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 50
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,465
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 140 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8536300000
CAHTS 8541290000
USHTS 8541290065
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Manufactured by Panjit, the PSMP050N10NS2_T0_00601 is classified as a mosfets. Key specifications include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 100 V, a current, continuous drain (id) @ 25°C of 120A (Tc), a drive voltage of 6V, 10V and a rds on (max) @ id, vgs of 5mOhm @ 50A, 10V. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. Order PSMP050N10NS2_T0_00601 from Simplytronix for authenticated stock and same-day order processing.

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