*For representation only.
PJX8812_R1_00001
Panjit
Not For New Designs
MOSFETs 30V N-Channel Enhancement Mode MOSFETESD Protected
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 350mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.87nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 34pF @ 15V |
| Power - Max | 300mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SOT-563 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 4000 |
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Alternate / Replacement Parts
| Alternate Packaging | |
| Suggested Replacement | PJX8828_R1_00001 |
12,198
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 168 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
The PJX8812_R1_00001 from Panjit falls under the mosfets category. Notable characteristics of this part include a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of -, a drain to source voltage of 30V, a current, continuous drain (id) @ 25°C of 350mA (Ta) and a rds on (max) @ id, vgs of 1.2Ohm @ 350mA, 4.5V. This part has a typical lead time of 168 Days from factory. Simplytronix stocks PJX8812_R1_00001 for same-day shipping with genuine parts guaranteed.
