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PCDP2065GC_T0_00601 Panjit
*For representation only.

PCDP2065GC_T0_00601

Panjit Active
SiC Schottky Diodes 650V SiC Schottky Barrier Diode
Technical Specifications
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 20A
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 20 A
Speed Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 100 µA @ 650 V
Capacitance @ Vr, F 529pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220AC
Operating Temperature - Junction -55°C ~ 175°C
📦 Product Attributes
Packaging Tube
Standard Pack Qty 50
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,551
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant
Lifecycle Not Recommended for New Designs
Lead Time 245 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
USHTS 8541100000
ECCN EAR99
Product Overview

The PCDP2065GC_T0_00601 from Panjit falls under the sic schottky diodes category. Key specifications include a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 650 V, a current, average rectified of 20A, a voltage, forward (vf) (max) @ if of 1.8 V @ 20 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 245 Days from factory. Order PCDP2065GC_T0_00601 from Simplytronix for authenticated stock and same-day order processing.

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