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PCDH4065CCGB_T0_00601 Panjit
*For representation only.

PCDH4065CCGB_T0_00601

SiC Schottky Diodes 650V SiC Schottky Barrier Diode
Technical Specifications
Diode Configuration 1 Pair Common Cathode
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) (per Diode) 20A
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 20 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 100 µA @ 650 V
Operating Temperature - Junction -55°C ~ 175°C
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AD
📦 Product Attributes
Packaging Tube
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,931
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant
Lifecycle
Lead Time 245 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541100090
USHTS 8541100080
TARIC 8541100000
ECCN EAR99
Product Overview

The PCDH4065CCGB_T0_00601 from Panjit falls under the sic schottky diodes category. Key specifications include a diode configuration of 1 Pair Common Cathode, a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 650 V, a current, average rectified (io) of 20A, a voltage, forward (vf) (max) @ if of 1.6 V @ 20 A and a speed of No Recovery Time > 500mA (Io). This part has a typical lead time of 245 Days from factory. Simplytronix stocks PCDH4065CCGB_T0_00601 for same-day shipping with genuine parts guaranteed.

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