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PCDD08120G1_L2_00001 Panjit
*For representation only.

PCDD08120G1_L2_00001

SiC Schottky Diodes 1200V SiC Schottky Barrier Diode
Technical Specifications
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 8A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 8 A
Speed Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 60 µA @ 1200 V
Capacitance @ Vr, F 418pF @ 1V, 1MHz
Mounting Type Surface Mount
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package TO-252AA
Operating Temperature - Junction -55°C ~ 175°C
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,071
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant By Exemption
Lifecycle Not Recommended for New Designs
Lead Time 98 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541100000
USHTS 8541100080
TARIC 8541100000
ECCN EAR99
Product Overview

Manufactured by Panjit, the PCDD08120G1_L2_00001 is classified as a sic schottky diodes. This component is defined by a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 1200 V, a current, average rectified of 8A, a voltage, forward (vf) (max) @ if of 1.7 V @ 8 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 98 Days from factory. Simplytronix stocks PCDD08120G1_L2_00001 for same-day shipping with genuine parts guaranteed.

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