*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Cascode SiCJFET) |
| Drain to Source Voltage (Vdss) | 750 V |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 30A, 12V |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 37.8 nC @ 15 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 400 V |
| Power Dissipation (Max) | 242W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4 |
| Package / Case | TO-247-4 |
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Product Attributes
| Packaging | |
| Standard Pack Qty |
2,149
Units In Stock
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- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | |
| Lifecycle | |
| Lead Time | (from factory) |
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Documentation
Datasheet not available
