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UJ3D1210KSD onsemi
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UJ3D1210KSD

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SiC Schottky Diodes 1200V/10ASICDIODEDUAL
Technical Specifications
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 5A
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 5 A
Speed Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 110 µA @ 1200 V
Capacitance @ Vr, F 500pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Operating Temperature - Junction -55°C ~ 175°C
📦 Product Attributes
Packaging Tube
Standard Pack Qty 600
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,950
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant
Lifecycle Not Recommended for New Designs
Lead Time 217 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541100000
CAHTS 8541100090
USHTS 8541100080
JPHTS 854110090
MXHTS 8541100101
ECCN EAR99
Product Overview

onsemi's UJ3D1210KSD is a widely used sic schottky diodes in electronic designs. Key specifications include a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 1200 V, a current, average rectified of 5A, a voltage, forward (vf) (max) @ if of 1.6 V @ 5 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 217 Days from factory. Simplytronix stocks UJ3D1210KSD for same-day shipping with genuine parts guaranteed.

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