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SNXH100M65L4Q2F2P2G-N1 onsemi
*For representation only.

SNXH100M65L4Q2F2P2G-N1

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IGBT Modules 11705 GEN-III 1100V Q2PACK
Technical Specifications
IGBT Type Trench Field Stop
Configuration Three Level Inverter
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 113 A
Power - Max 226 W
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 225A
Current - Collector Cutoff (Max) 300 µA
Input Capacitance (Cies) @ Vce 14630 pF @ 20 V
Input Standard
NTC Thermistor Yes
Operating Temperature 175°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package 40-PIM/Q2PACK (93x47)
📦 Product Attributes
Packaging Tray
Standard Pack Qty 12
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,084
Units In Stock
📦 Tray
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🔑 Key Specifications
Category IGBT Modules
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 119 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

The SNXH100M65L4Q2F2P2G-N1 from onsemi falls under the igbt modules category. It features a IGBT type of Trench Field Stop, a configuration of Three Level Inverter, a voltage, collector emitter breakdown of 650 V, a current, collector (ic) of 113 A, a power, max of 226 W and a vce(on) (max) @ vge, ic of 2.2V @ 15V, 225A. This part has a typical lead time of 119 Days from factory and ships with a full manufacturer datasheet available for download. Order SNXH100M65L4Q2F2P2G-N1 from Simplytronix for authenticated stock and same-day order processing.

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