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NXH50M65L4Q1SG

onsemi Active
IGBT Modules Q1PACK 50A 650V
Technical Specifications
IGBT Type Trench Field Stop
Configuration Full Bridge
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 48 A
Power - Max 86 W
Vce(on) (Max) @ Vge, Ic 2.22V @ 15V, 50A
Current - Collector Cutoff (Max) 300 µA
Input Capacitance (Cies) @ Vce 3.137 nF @ 20 V
Input Standard
NTC Thermistor Yes
Operating Temperature 175°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package 56-PIM (93x47)
📦 Product Attributes
Packaging Tray
Standard Pack Qty 21
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,384
Units In Stock
📦 Tray
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  • Global shipping
  • Genuine parts guaranteed
🔑 Key Specifications
Category IGBT Modules
RoHS RoHS Compliant
Lifecycle
Lead Time 119 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
Product Overview

NXH50M65L4Q1SG is an igbt modules manufactured by onsemi. Key specifications include a IGBT type of Trench Field Stop, a configuration of Full Bridge, a voltage, collector emitter breakdown of 650 V, a current, collector (ic) of 48 A, a power, max of 86 W and a vce(on) (max) @ vge, ic of 2.22V @ 15V, 50A. This part has a typical lead time of 119 Days from factory. Simplytronix stocks NXH50M65L4Q1SG for same-day shipping with genuine parts guaranteed.

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