Similar Products
| IGBT Type | - |
| Configuration | Three Level Inverter |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector (Ic) (Max) | 181 A |
| Power - Max | 500 W |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 160A |
| Current - Collector Cutoff (Max) | 500 µA |
| Input Capacitance (Cies) @ Vce | 38.8 nF @ 25 V |
| Input | Standard |
| NTC Thermistor | Yes |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | 56-PIM/Q2PACK (93x47) |
| Packaging | Tray |
| Standard Pack Qty | 12 |
| Category | IGBT Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 112 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
The NXH160T120L2Q2F2S1G from onsemi falls under the igbt modules category. This component is defined by a IGBT type of -, a configuration of Three Level Inverter, a voltage, collector emitter breakdown of 1200 V, a current, collector (ic) of 181 A, a power, max of 500 W and a vce(on) (max) @ vge, ic of 2.7V @ 15V, 160A. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. You can source NXH160T120L2Q2F2S1G through Simplytronix, with fast shipping and verified authenticity.
