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NXH100T120L3Q0S1NG onsemi
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NXH100T120L3Q0S1NG

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IGBT Modules 1200V GEN III Q0PACK WITH NI-PLATED DBC
Technical Specifications
IGBT Type -
Configuration Three Level Inverter
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 54 A
Power - Max 122 W
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 75A
Current - Collector Cutoff (Max) 200 µA
Input Capacitance (Cies) @ Vce 4877 pF @ 25 V
Input Standard
NTC Thermistor Yes
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package 18-PIM/Q0PACK (55x32.5)
📦 Product Attributes
Packaging Tray
Standard Pack Qty 24
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,226
Units In Stock
📦 Tray
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🔑 Key Specifications
Category IGBT Modules
RoHS RoHS Compliant
Lifecycle
Lead Time 105 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
USHTS 8541290095
TARIC 8541290000
ECCN EAR99
Product Overview

The NXH100T120L3Q0S1NG from onsemi falls under the igbt modules category. Notable characteristics of this part include a IGBT type of -, a configuration of Three Level Inverter, a voltage, collector emitter breakdown of 650 V, a current, collector (ic) of 54 A, a power, max of 122 W and a vce(on) (max) @ vge, ic of 2.2V @ 15V, 75A. This part has a typical lead time of 105 Days from factory. Simplytronix stocks NXH100T120L3Q0S1NG for same-day shipping with genuine parts guaranteed.

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