*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.8 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 15 V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 26W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount, Wettable Flank |
| Supplier Device Package | 8-WDFNW (3.3x3.3) |
| Package / Case | 8-PowerWDFN |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 5000 |
5,227
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 98 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290040 |
| ECCN | EAR99 |
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Product Overview
onsemi's NVTFS4C13NWFETWG is a widely used component in electronic designs. This component is defined by a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 30 V, a current, continuous drain (id) @ 25°C of 14A (Ta), 40A (Tc), a drive voltage of 4.5V, 10V and a rds on (max) @ id, vgs of 9.4mOhm @ 30A, 10V. This part has a typical lead time of 98 Days from factory. Simplytronix carries NVTFS4C13NWFETWG in stock, backed by a genuine parts guarantee and quick dispatch.