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NDSH40120C-F155 onsemi
*For representation only.

NDSH40120C-F155

SiC Schottky Diodes SIC DIODE GEN2.0 1200V TO247-2L
Technical Specifications
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 46A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 40 A
Speed Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 1200 V
Capacitance @ Vr, F 2840pF @ 1V, 100kHz
Grade -
Qualification -
Mounting Type Through Hole
Package / Case TO-247-2
Supplier Device Package TO-247-2
Operating Temperature - Junction -55°C ~ 175°C
📦 Product Attributes
Packaging Tube
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,479
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant
Lifecycle
Lead Time 119 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541100090
USHTS 8541100080
TARIC 8541100000
ECCN EAR99
Product Overview

Manufactured by onsemi, the NDSH40120C-F155 is classified as a sic schottky diodes. Notable characteristics of this part include a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 1200 V, a current, average rectified of 46A, a voltage, forward (vf) (max) @ if of 1.75 V @ 40 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 119 Days from factory and ships with a full manufacturer datasheet available for download. You can source NDSH40120C-F155 through Simplytronix, with fast shipping and verified authenticity.

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