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NDSH20120CDN onsemi
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NDSH20120CDN

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SiC Schottky Diodes SIC DIODE GEN2.0 1200V TO247-3L
Technical Specifications
Diode Configuration 1 Pair Common Cathode
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) (per Diode) 10A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 10 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 1200 V
Operating Temperature - Junction -55°C ~ 175°C
Grade -
Qualification -
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,736
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant
Lifecycle
Lead Time 84 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541100090
USHTS 8541100080
TARIC 8541100000
ECCN EAR99
Product Overview

The NDSH20120CDN from onsemi falls under the sic schottky diodes category. Key specifications include a diode configuration of 1 Pair Common Cathode, a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 1200 V, a current, average rectified (io) of 10A, a voltage, forward (vf) (max) @ if of 1.75 V @ 10 A and a speed of No Recovery Time > 500mA (Io). This part has a typical lead time of 84 Days from factory. Simplytronix carries NDSH20120CDN in stock, backed by a genuine parts guarantee and quick dispatch.

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