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NCV57255DR2G onsemi
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NCV57255DR2G

Galvanically Isolated Gate Drivers ISOLATED DUAL OUTPUT IGBT DRIVER IN SOIC16NB
Technical Specifications
Technology Capacitive Coupling
Number of Channels 2
Voltage - Isolation 2500Vrms
Common Mode Transient Immunity (Min) 100kV/µs
Propagation Delay tpLH / tpHL (Max) 80ns, 80ns
Pulse Width Distortion (Max) 20ns
Rise / Fall Time (Typ) 12ns, 10ns
Current - Output High, Low 3.5A, 3.5A
Current - Peak Output 3.5A, 6.5A
Voltage - Forward (Vf) (Typ) -
Voltage - Output Supply 32V
Grade Automotive
Qualification AEC-Q100
Operating Temperature -40°C ~ 125°C
Mounting Type Surface Mount
Package / Case 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package 16-SOIC
Approval Agency VDE
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,705
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Galvanically Isolated Gate Drivers
RoHS
Lifecycle
Lead Time 273 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
USHTS 8542390090
ECCN EAR99
Product Overview

NCV57255DR2G is a galvanically isolated gate drivers manufactured by onsemi. This component is defined by a technology of Capacitive Coupling, a number of channels of 2, a voltage, isolation of 2500Vrms, a common mode transient immunity of 100kV/µs, a propagation delay tplh / tphl of 80ns, 80ns and a pulse width distortion of 20ns. This part has a typical lead time of 273 Days from factory. Order NCV57255DR2G from Simplytronix for authenticated stock and same-day order processing.

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