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NCD57200DR2G onsemi
*For representation only.

NCD57200DR2G

Galvanically Isolated Gate Drivers Isolated High Side Non-Isolated LowSide
Technical Specifications
Technology Capacitive Coupling
Number of Channels 1
Voltage - Isolation -
Common Mode Transient Immunity (Min) 100kV/µs (Max)
Propagation Delay tpLH / tpHL (Max) 110ns, 110ns
Pulse Width Distortion (Max) 25ns
Rise / Fall Time (Typ) 13ns, 13ns
Current - Output High, Low -
Current - Peak Output 1.9A, 2.3A
Voltage - Forward (Vf) (Typ) -
Voltage - Output Supply -
Operating Temperature -40°C ~ 125°C (TA)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Approval Agency -
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,561
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Galvanically Isolated Gate Drivers
RoHS RoHS Compliant
Lifecycle
Lead Time 161 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8542399000
CAHTS 8542390000
USHTS 8542390090
MXHTS 8542399999
ECCN EAR99
Product Overview

The NCD57200DR2G from onsemi falls under the galvanically isolated gate drivers category. Key specifications include a technology of Capacitive Coupling, a number of channels of 1, a voltage, isolation of -, a common mode transient immunity of 100kV/µs (Max), a propagation delay tplh / tphl of 110ns, 110ns and a pulse width distortion of 25ns. This part has a typical lead time of 161 Days from factory and ships with a full manufacturer datasheet available for download. Order NCD57200DR2G from Simplytronix for authenticated stock and same-day order processing.

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