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NCD57001FDWR2G onsemi
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NCD57001FDWR2G

Galvanically Isolated Gate Drivers ISOLATED HIGH CURRENT IGBT GATE DRIVER WITH FAST STO
Technical Specifications
Technology Capacitive Coupling
Number of Channels 1
Voltage - Isolation 5000Vrms
Common Mode Transient Immunity (Min) 100kV/µs
Propagation Delay tpLH / tpHL (Max) 90ns, 90ns
Pulse Width Distortion (Max) 15ns
Rise / Fall Time (Typ) 10ns, 15ns
Current - Output High, Low -
Current - Peak Output 7.8A, 7.1A
Voltage - Forward (Vf) (Typ) -
Current - DC Forward (If) (Max) 10 mA
Voltage - Output Supply 0V ~ 24V
Operating Temperature -40°C ~ 125°C (TJ)
Mounting Type Surface Mount
Package / Case 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package 16-SOIC
Approval Agency UL, VDE
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,909
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Galvanically Isolated Gate Drivers
RoHS RoHS Compliant
Lifecycle
Lead Time 210 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8542399000
USHTS 8542390090
ECCN EAR99
Product Overview

Manufactured by onsemi, the NCD57001FDWR2G is classified as a galvanically isolated gate drivers. Notable characteristics of this part include a technology of Capacitive Coupling, a number of channels of 1, a voltage, isolation of 5000Vrms, a common mode transient immunity of 100kV/µs, a propagation delay tplh / tphl of 90ns, 90ns and a pulse width distortion of 15ns. This part has a typical lead time of 210 Days from factory and ships with a full manufacturer datasheet available for download. You can source NCD57001FDWR2G through Simplytronix, with fast shipping and verified authenticity.

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