| IGBT Type | NPT |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector (Ic) (Max) | 35 A |
| Current - Collector Pulsed (Icm) | 80 A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
| Power - Max | 298 W |
| Switching Energy | 320µJ (on), 800µJ (off) |
| Input Type | Standard |
| Gate Charge | 100 nC |
| Td (on/off) @ 25°C | 23ns/165ns |
| Test Condition | 960V, 10A, 10Ohm, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263 (D2PAK) |
| Packaging | Reel |
| Standard Pack Qty | 800 |
| Alternate Packaging | HGT1S10N120BNS |
| Suggested Replacement |
| Category | IGBTs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | Factory Special Order |
| Lead Time | 91 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
The HGT1S10N120BNST from onsemi falls under the igbts category. Key specifications include a IGBT type of NPT, a voltage, collector emitter breakdown of 1200 V, a current, collector (ic) of 35 A, a current, collector pulsed of 80 A, a vce(on) (max) @ vge, ic of 2.7V @ 15V, 10A and a power, max of 298 W. This part has a typical lead time of 91 Days from factory and ships with a full manufacturer datasheet available for download. You can source HGT1S10N120BNST through Simplytronix, with fast shipping and verified authenticity.