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HGT1S10N120BNST onsemi
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HGT1S10N120BNST

IGBTs N-Channel IGBT NPT Series 1200V
Technical Specifications
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 35 A
Current - Collector Pulsed (Icm) 80 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Power - Max 298 W
Switching Energy 320µJ (on), 800µJ (off)
Input Type Standard
Gate Charge 100 nC
Td (on/off) @ 25°C 23ns/165ns
Test Condition 960V, 10A, 10Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263 (D2PAK)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 800
🔁 Alternate / Replacement Parts
Alternate Packaging HGT1S10N120BNS
Suggested Replacement
8,457
Units In Stock
📦 Reel
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🔑 Key Specifications
Category IGBTs
RoHS RoHS Compliant By Exemption
Lifecycle Factory Special Order
Lead Time 91 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

The HGT1S10N120BNST from onsemi falls under the igbts category. Key specifications include a IGBT type of NPT, a voltage, collector emitter breakdown of 1200 V, a current, collector (ic) of 35 A, a current, collector pulsed of 80 A, a vce(on) (max) @ vge, ic of 2.7V @ 15V, 10A and a power, max of 298 W. This part has a typical lead time of 91 Days from factory and ships with a full manufacturer datasheet available for download. You can source HGT1S10N120BNST through Simplytronix, with fast shipping and verified authenticity.

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