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FFSP08120A onsemi
*For representation only.

FFSP08120A

SiC Schottky Diodes 1200V SiC SBD 8A
Technical Specifications
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 8A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 200 µA @ 1200 V
Capacitance @ Vr, F 538pF @ 1V, 100kHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220-2L
Operating Temperature - Junction -55°C ~ 175°C
📦 Product Attributes
Packaging Tube
Standard Pack Qty 50
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,355
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 147 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541100000
CAHTS 8541100090
USHTS 8541100080
JPHTS 854110090
KRHTS 8541109000
TARIC 8541100000
MXHTS 8541100101
ECCN EAR99
Product Overview

onsemi's FFSP08120A is a widely used sic schottky diodes in electronic designs. Key specifications include a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 1200 V, a current, average rectified of 8A, a voltage, forward (vf) (max) @ if of 1.75 V @ 8 A, a speed of Fast Recovery =< 500ns, > 200mA (Io) and a current, reverse leakage @ vr of 200 µA @ 1200 V. This part has a typical lead time of 147 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries FFSP08120A in stock, backed by a genuine parts guarantee and quick dispatch.

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