| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 11A |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 10 A |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
| Capacitance @ Vr, F | 575pF @ 1V, 100kHz |
| Mounting Type | Surface Mount |
| Package / Case | 4-PowerTSFN |
| Supplier Device Package | 4-PQFN (8x8) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 224 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541100000 |
| USHTS | 8541100080 |
| ECCN | EAR99 |
FFSM1065A is a sic schottky diodes manufactured by onsemi. Notable characteristics of this part include a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 650 V, a current, average rectified of 11A, a voltage, forward (vf) (max) @ if of 1.75 V @ 10 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 224 Days from factory and ships with a full manufacturer datasheet available for download. Order FFSM1065A from Simplytronix for authenticated stock and same-day order processing.