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FFSH5065B-F085 onsemi
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FFSH5065B-F085

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SiC Schottky Diodes 650V
Technical Specifications
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 50A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 50 A
Speed Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 40 µA @ 650 V
Capacitance @ Vr, F 2030pF @ 1V, 100kHz
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Package / Case TO-247-2
Supplier Device Package TO-247-2
Operating Temperature - Junction -55°C ~ 175°C
📦 Product Attributes
Packaging Tube
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,292
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 133 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541100000
USHTS 8541100080
ECCN EAR99
Product Overview

The FFSH5065B-F085 from onsemi falls under the sic schottky diodes category. This component is defined by a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 650 V, a current, average rectified of 50A, a voltage, forward (vf) (max) @ if of 1.7 V @ 50 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 133 Days from factory and ships with a full manufacturer datasheet available for download. You can source FFSH5065B-F085 through Simplytronix, with fast shipping and verified authenticity.

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