*For representation only.
FFSD0465A
SiC Schottky Diodes Silicon Carbide (SiC) Schottky Diode - EliteSiC, 4 A, 650 V, D1, DPAK Silicon Carbide (SiC) Schottky Diode - EliteSiC, 4 A, 650 V, D1, DPAK
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Technical Specifications
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 7.6A |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 4 A |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
| Capacitance @ Vr, F | 258pF @ 1V, 100kHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252 (DPAK) |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2500 |
11,355
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | End of Life |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541100000 |
| USHTS | 8541100080 |
| ECCN | EAR99 |
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Product Overview
onsemi's FFSD0465A is a widely used sic schottky diodes in electronic designs. This component is defined by a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 650 V, a current, average rectified of 7.6A, a voltage, forward (vf) (max) @ if of 1.75 V @ 4 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 0 Days from factory. Order FFSD0465A from Simplytronix for authenticated stock and same-day order processing.
