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FFSB3065B onsemi
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FFSB3065B

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SiC Schottky Diodes 650V 30A SIC SBD GEN1.5
Technical Specifications
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 73A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 30 A
Speed Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 40 µA @ 650 V
Capacitance @ Vr, F 1280pF @ 1V, 100kHz
Mounting Type Surface Mount
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263 (D2PAK)
Operating Temperature - Junction -55°C ~ 175°C
📦 Product Attributes
Packaging Reel
Standard Pack Qty 800
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,849
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant
Lifecycle
Lead Time 133 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541100000
USHTS 8541100080
ECCN EAR99
Product Overview

onsemi's FFSB3065B is a widely used sic schottky diodes in electronic designs. This component is defined by a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 650 V, a current, average rectified of 73A, a voltage, forward (vf) (max) @ if of 1.7 V @ 30 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 133 Days from factory. Order FFSB3065B from Simplytronix for authenticated stock and same-day order processing.

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